SIGC158T120R3 igbt equivalent, igbt.
* 1200V Trench + Field Stop technology
* low turn-off losses
* short tail current
* positive temperature coefficient
* easy paralleling
3
This chip .
* drives
G
E
Chip Type SIGC158T120R3
VCE
ICn
Die Size 12.56 x 12.56 mm2
Package sawn on foil
Ordering Code .
AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld
Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 M.
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